IPDQ60R010S7XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

50A (Tc)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

12V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

318 nC @ 12 V

Input Capacitance (Ciss) (Max) @ Vds :

11987 pF @ 300 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

22-PowerBSOP Module

Part Status :

Active

Power Dissipation (Max) :

694W (Tc)

Rds On (Max) @ Id, Vgs :

10mOhm @ 50A, 12V

Supplier Device Package :

PG-HDSOP-22-1

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4.5V @ 3.08mA