- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 48A (Tc)
- Drain to Source Voltage (Vdss) :
- 600 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 98 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4013 pF @ 100 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-PowerBSFN
- Part Status :
- Active
- Power Dissipation (Max) :
- 278W (Tc)
- Rds On (Max) @ Id, Vgs :
- 49mOhm @ 17A, 10V
- Supplier Device Package :
- PowerPAK®10 x 12
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 5V @ 250µA
- Datasheets
- SIHK045N60E-T1-GE3
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SIHK055N60E-T1-GE3 | Vishay | 5,800 | E SERIES POWER MOSFET POWERPAK 1 |
SIHK065N60E-T1-GE3 | Vishay | 5,800 | E SERIES POWER MOSFET POWERPAK 1 |
SIHK075N60E-T1-GE3 | Vishay | 50 | E SERIES POWER MOSFET POWERPAK 1 |
SIHK125N60E-T1-GE3 | Vishay | 5,800 | E SERIES POWER MOSFET POWERPAK 1 |