NP82N04NDG-S18-AY

Manufacturer :

Rochester Electronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

82A (Tc)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

150 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

9 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

175°C (TJ)

Package / Case :

TO-262-3 Full Pack, I²Pak

Part Status :

Obsolete

Power Dissipation (Max) :

1.8W (Ta), 143W (Tc)

Rds On (Max) @ Id, Vgs :

4.2mOhm @ 41A, 10V

Supplier Device Package :

TO-262-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

2.5V @ 250µA