ISP12DP06NMXTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2.8A (Ta)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

20.2 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

790 pF @ 30 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Part Status :

Active

Power Dissipation (Max) :

1.8W (Ta), 4.2W (Tc)

Rds On (Max) @ Id, Vgs :

125mOhm @ 2.8A, 10V

Supplier Device Package :

PG-SOT223-4

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 520µA