TK1R4S04PB,LXHQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

120A (Ta)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

103 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

5500 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

175°C

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Part Status :

Active

Power Dissipation (Max) :

180W (Tc)

Rds On (Max) @ Id, Vgs :

1.9mOhm @ 60A, 6V

Supplier Device Package :

DPAK+

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 500µA