RBA250N10CHPF-4UA02

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

250A (Ta)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

190 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

9500 pF @ 50 V

Mounting Type :

Surface Mount

Operating Temperature :

175°C

Package / Case :

TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

Part Status :

Active

Power Dissipation (Max) :

1.8W (Ta), 348W (Tc)

Rds On (Max) @ Id, Vgs :

2.4mOhm @ 125A, 10V

Supplier Device Package :

TO-263-7

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.8V @ 250µA