NTTFS1D8N02P1E

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

20A (Ta), 152A (Tc)

Drain to Source Voltage (Vdss) :

25 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

38 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

3159 pF @ 13 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerWDFN

Part Status :

Active

Power Dissipation (Max) :

800mW (Ta), 48W (Tc)

Rds On (Max) @ Id, Vgs :

1.3mOhm @ 30A, 10V

Supplier Device Package :

8-PQFN (3.3x3.3)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

+16V, -12V

Vgs(th) (Max) @ Id :

2V @ 700µA