DMT12H090LFDF4-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3.4A (Ta)

Drain to Source Voltage (Vdss) :

115 V

Drive Voltage (Max Rds On, Min Rds On) :

3V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

6 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

251 pF @ 50 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-PowerXDFN

Part Status :

Active

Power Dissipation (Max) :

900mW (Ta)

Rds On (Max) @ Id, Vgs :

90mOhm @ 3.5A, 10V

Supplier Device Package :

X2-DFN2020-6

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

2.2V @ 250µA