IPB320P10LMATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

6.5A (Ta), 63A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

219 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

11000 pF @ 50 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Part Status :

Active

Power Dissipation (Max) :

3.8W (Ta), 300W (Tc)

Rds On (Max) @ Id, Vgs :

32mOhm @ 54A, 10V

Supplier Device Package :

PG-TO263-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 5.55mA