DMT10H072LFV-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4.7A (Ta), 20A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

4.5 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

228 pF @ 50 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerVDFN

Part Status :

Active

Power Dissipation (Max) :

2W (Ta)

Rds On (Max) @ Id, Vgs :

62mOhm @ 4.5A, 10V

Supplier Device Package :

PowerDI3333-8 (Type UX)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.8V @ 250µA