- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 14.4A (Ta), 35A (Tc)
- Drain to Source Voltage (Vdss) :
- 30 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 71 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3345 pF @ 15 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -50°C ~ 150°C (TJ)
- Package / Case :
- PowerPAK® 1212-8SH
- Part Status :
- Active
- Power Dissipation (Max) :
- 3.8W (Ta), 52.1W (Tc)
- Rds On (Max) @ Id, Vgs :
- 11.4mOhm @ 14.4A, 10V
- Supplier Device Package :
- PowerPAK® 1212-8SH
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.8V @ 250µA
- Datasheets
- SISH129DN-T1-GE3
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SISH434DN-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 40V 17.6A/35A PPAK |
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SISH536DN-T1-GE3 | Vishay | 5,800 | N-CHANNEL 30 V (D-S) MOSFET POWE |
SISH615ADN-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 20V 22.1A/35A PPAK |
SISH617DN-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 30V 13.9A/35A PPAK |