- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 35A (Tc)
- Drain to Source Voltage (Vdss) :
- 20 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 2.5V, 10V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 180 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5460 pF @ 10 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- PowerPAK® 1212-8
- Part Status :
- Active
- Power Dissipation (Max) :
- 3.7W (Ta), 52W (Tc)
- Rds On (Max) @ Id, Vgs :
- 3.8mOhm @ 20A, 10V
- Supplier Device Package :
- PowerPAK® 1212-8
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±12V
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Datasheets
- SI7623DN-T1-GE3
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Part | Manufacturer | Stock | Description |
---|---|---|---|
SI7601DN-T1-E3 | Vishay | 5,800 | MOSFET P-CH 20V 16A PPAK1212-8 |
SI7601DN-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 20V 16A PPAK1212-8 |
SI7611DN-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 40V 18A PPAK1212-8 |
SI7613DN-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 20V 35A PPAK1212-8 |
SI7615ADN-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 20V 35A PPAK1212-8 |
SI7615BDN-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 20V 29A/104A PPAK |
SI7615CDN-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 20V 35A PPAK1212-8 |
SI7615DN-T1-GE3 | Vishay | 291 | MOSFET P-CH 20V 35A PPAK1212-8 |
SI7617DN-T1-GE3 | Vishay | 2,331 | MOSFET P-CH 30V 35A PPAK1212-8 |
SI7619DN-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 30V 24A PPAK1212-8 |
SI7620DN-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 150V 13A PPAK1212-8 |
SI7621DN-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 20V 4A PPAK1212-8 |
SI7625DN-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 30V 35A PPAK1212-8 |
SI7629DN-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 20V 35A PPAK1212-8 |
SI7633DP-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 20V 60A PPAK SO-8 |