CSD17313Q2Q1

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

5A (Tc)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

3V, 8V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

2.7 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

340 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-WDFN Exposed Pad

Part Status :

Not For New Designs

Power Dissipation (Max) :

2.3W (Ta)

Rds On (Max) @ Id, Vgs :

30mOhm @ 4A, 8V

Supplier Device Package :

6-WSON (2x2)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

+10V, -8V

Vgs(th) (Max) @ Id :

1.8V @ 250µA