NTH4L080N120SC1

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

29A (Tc)

Drain to Source Voltage (Vdss) :

1200 V

Drive Voltage (Max Rds On, Min Rds On) :

20V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

56 nC @ 20 V

Input Capacitance (Ciss) (Max) @ Vds :

1670 pF @ 800 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-247-4

Part Status :

Active

Power Dissipation (Max) :

170W (Tc)

Rds On (Max) @ Id, Vgs :

110mOhm @ 20A, 20V

Supplier Device Package :

TO-247-4L

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

+25V, -15V

Vgs(th) (Max) @ Id :

4.3V @ 5mA