XPH3R114MC,L1XHQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

100A (Ta)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

230 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

9500 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

175°C

Part Status :

Active

Power Dissipation (Max) :

960mW (Ta), 170W (Tc)

Rds On (Max) @ Id, Vgs :

3.1mOhm @ 50A, 10V

Supplier Device Package :

8-SOP Advance (5x5)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

+20V, -10V

Vgs(th) (Max) @ Id :

2.1V @ 1mA