- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 35A (Tc)
- Drain to Source Voltage (Vdss) :
- 30 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 71 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2230 pF @ 15 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -50°C ~ 150°C (TJ)
- Package / Case :
- PowerPAK® SO-8
- Part Status :
- Active
- Power Dissipation (Max) :
- 4.2W (Ta), 35.7W (Tc)
- Rds On (Max) @ Id, Vgs :
- 10mOhm @ 16.1A, 10V
- Supplier Device Package :
- PowerPAK® SO-8
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.8V @ 250µA
- Datasheets
- SI7143DP-T1-GE3
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| SI7100DN-T1-E3 | Vishay | 5,800 | MOSFET N-CH 8V 35A PPAK1212-8 |
| SI7100DN-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 8V 35A PPAK 1212-8 |
| SI7101DN-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 30V 35A PPAK 1212-8 |
| SI7102DN-T1-E3 | Vishay | 5,800 | MOSFET N-CH 12V 35A PPAK 1212-8 |
| SI7102DN-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 12V 35A PPAK1212-8 |
| SI7104DN-T1-E3 | Vishay | 5,800 | MOSFET N-CH 12V 35A PPAK 1212-8 |
| SI7104DN-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 12V 35A PPAK 1212-8 |
| SI7106DN-T1-E3 | Vishay | 5,800 | MOSFET N-CH 20V 12.5A PPAK1212-8 |
| SI7106DN-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 20V 12.5A PPAK1212-8 |
| SI7107DN-T1-E3 | Vishay | 5,800 | MOSFET P-CH 20V 9.8A PPAK1212-8 |
| SI7107DN-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 20V 9.8A PPAK1212-8 |
| SI7108DN-T1-E3 | Vishay | 257 | MOSFET N-CH 20V 14A PPAK1212-8 |
| SI7108DN-T1-GE3 | Vishay | 801 | MOSFET N-CH 20V 14A PPAK1212-8 |
| SI7110DN-T1-E3 | Vishay | 5,800 | MOSFET N-CH 20V 13.5A PPAK1212-8 |
| SI7110DN-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 20V 13.5A PPAK1212-8 |








