- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 8A (Tc)
- Drain to Source Voltage (Vdss) :
- 60 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 40 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1140 pF @ 30 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TA)
- Package / Case :
- PowerPAK® SO-8
- Part Status :
- Active
- Power Dissipation (Max) :
- 45W (Tc)
- Rds On (Max) @ Id, Vgs :
- 85mOhm @ 3.5A, 10V, 1.17mOhm @ 20A, 10V
- Supplier Device Package :
- PowerPAK® SO-8
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250µA
- Datasheets
- SQJ465EP-T1_GE3
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SQJ401EP-T1_GE3 | Vishay | 38 | MOSFET P-CH 12V 32A PPAK SO-8 |
SQJ401EP-T2_GE3 | Vishay | 5,800 | MOSFET P-CH 12V 32A PPAK SO-8 |
SQJ402EP-T1_GE3 | Vishay | 5,800 | MOSFET N-CH 100V 32A PPAK SO-8 |
SQJ403BEEP-T1_GE3 | Vishay | 5,800 | MOSFET P-CH 30V 30A PPAK SO-8 |
SQJ403EP-T1_GE3 | Vishay | 5,800 | MOSFET P-CH 30V 30A PPAK SO-8 |
SQJ407EP-T1_GE3 | Vishay | 5 | MOSFET P-CH 30V 60A PPAK SO-8 |
SQJ409EP-T1_GE3 | Vishay | 5,800 | MOSFET P-CH 40V 60A PPAK SO-8 |
SQJ410EP-T1_GE3 | Vishay | 1,333 | MOSFET N-CH 30V 32A PPAK SO-8 |
SQJ411EP-T1_GE3 | Vishay | 5,800 | MOSFET P-CH 12V 60A PPAK SO-8 |
SQJ412EP-T1_GE3 | Vishay | 5,800 | MOSFET N-CH 40V 32A PPAK SO-8 |
SQJ412EP-T2_GE3 | Vishay | 5,800 | MOSFET N-CH 40V 32A PPAK SO-8 |
SQJ414EP-T1_GE3 | Vishay | 16 | MOSFET N-CH 30V 30A PPAK SO-8 |
SQJ415EP-T1_GE3 | Vishay | 5,800 | MOSFET P-CH 40V 30A PPAK SO-8 |
SQJ416EP-T1_GE3 | Vishay | 5,800 | MOSFET N-CH 100V 27A PPAK SO-8 |
SQJ418EP-T1_GE3 | Vishay | 5,800 | MOSFET N-CH 100V 48A PPAK SO-8 |