- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 60A (Tc)
- Drain to Source Voltage (Vdss) :
- 40 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 30 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3240 pF @ 20 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- PowerPAK® 1212-8
- Part Status :
- Active
- Power Dissipation (Max) :
- 52W (Tc)
- Rds On (Max) @ Id, Vgs :
- 3.5mOhm @ 10A, 10V
- Supplier Device Package :
- PowerPAK® 1212-8
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- +20V, -16V
- Vgs(th) (Max) @ Id :
- 2.4V @ 250µA
- Datasheets
- SISA72DN-T1-GE3
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Part | Manufacturer | Stock | Description |
---|---|---|---|
SISA01DN-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 30V 22.4A/60A PPAK |
SISA04DN-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 30V 40A PPAK1212-8 |
SISA10BDN-T1-GE3 | Vishay | 5,800 | N-CHANNEL 30-V (D-S) MOSFET POWE |
SISA10DN-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 30V 30A PPAK1212-8 |
SISA12ADN-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 30V 25A PPAK1212-8 |
SISA12BDN-T1-GE3 | Vishay | 5,800 | N-CHANNEL 30-V (D-S) MOSFET POWE |
SISA14BDN-T1-GE3 | Vishay | 5,800 | N-CHANNEL 30-V (D-S) MOSFET POWE |
SISA14DN-T1-GE3 | Vishay | 35 | MOSFET N-CH 30V 20A PPAK1212-8 |
SISA16DN-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 30V 16A PPAK1212-8 |
SISA18ADN-T1-GE3 | Vishay | 314 | MOSFET N-CH 30V 38.3A PPAK1212-8 |
SISA18DN-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 30V 38.3A PPAK1212-8 |
SISA24DN-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 25V 60A PPAK1212-8 |
SISA26DN-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 25V 60A PPAK1212-8S |
SISA34DN-T1-GE3 | Vishay | 127 | MOSFET N-CH 30V 40A PPAK1212-8 |
SISA35DN-T1-GE3 | Vishay | 6 | MOSFET P-CH 30V 10A/16A PPAK |