- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 100A (Tc)
- Drain to Source Voltage (Vdss) :
- 30 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 188 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 9530 pF @ 15 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- PowerPAK® SO-8
- Part Status :
- Active
- Power Dissipation (Max) :
- 104W (Tc)
- Rds On (Max) @ Id, Vgs :
- 0.62mOhm @ 20A, 10V
- Supplier Device Package :
- PowerPAK® SO-8
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- +20V, -16V
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Datasheets
- SIRA80DP-T1-RE3
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SIRA00DP-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 30V 100A PPAK SO-8 |
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SIRA01DP-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 30V 26A/60A PPAK SO8 |
SIRA02DP-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 30V 50A PPAK SO-8 |
SIRA04DP-T1-GE3 | Vishay | 245 | MOSFET N-CH 30V 40A PPAK SO-8 |
SIRA06DP-T1-GE3 | Vishay | 243 | MOSFET N-CH 30V 40A PPAK SO-8 |
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SIRA12DP-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 30V 25A PPAK SO-8 |
SIRA14BDP-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 30V 21A/64A PPAK SO8 |
SIRA14DP-T1-GE3 | Vishay | 7 | MOSFET N-CH 30V 58A PPAK SO-8 |
SIRA16DP-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 30V 16A PPAK SO-8 |
SIRA18ADP-T1-GE3 | Vishay | 1 | MOSFET N-CH 30V 30.6A PPAK SO-8 |
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