- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 45.3A (Ta), 169A(Tc)
- Drain to Source Voltage (Vdss) :
- 40 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 162 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 7800 pF @ 20 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- PowerPAK® SO-8
- Part Status :
- Active
- Power Dissipation (Max) :
- 5W (Ta), 69.4W (Tc)
- Rds On (Max) @ Id, Vgs :
- 1.35mOhm @ 20A, 10V
- Supplier Device Package :
- PowerPAK® SO-8
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- +20V, -16V
- Vgs(th) (Max) @ Id :
- 2.4V @ 250µA
- Datasheets
- SIJ438ADP-T1-GE3
Manufacturer related products
Catalog related products
related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
SIJ400DP-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 30V 32A PPAK SO-8 |
SIJ420DP-T1-GE3 | Vishay | 500 | MOSFET N-CH 20V 50A PPAK SO-8 |
SIJ438DP-T1-GE3 | Vishay | 1,326 | MOSFET N-CH 40V 80A PPAK SO-8 |
SIJ450DP-T1-GE3 | Vishay | 47 | N-CHANNEL 45 V (D-S) MOSFET POWE |
SIJ458DP-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 30V 60A PPAK SO-8 |
SIJ462ADP-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 60V 15.8A/39.3A PPAK |
SIJ462DP-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 60V 46.5A PPAK SO-8 |
SIJ470DP-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 100V 58.8A PPAK SO-8 |
SIJ478DP-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 80V 60A PPAK SO-8 |
SIJ482DP-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 80V 60A PPAK SO-8 |
SIJ484DP-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 30V 35A PPAK SO-8 |
SIJ494DP-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 150V 36.8A PPAK SO-8 |