- Manufacturer :
 - Vishay
 
- Product Category :
 - Transistors - FETs, MOSFETs - Single
 
- Current - Continuous Drain (Id) @ 25°C :
 - 8A (Tc)
 
- Drain to Source Voltage (Vdss) :
 - 30 V
 
- Drive Voltage (Max Rds On, Min Rds On) :
 - 2.5V, 10V
 
- FET Feature :
 - -
 
- FET Type :
 - P-Channel
 
- Gate Charge (Qg) (Max) @ Vgs :
 - 41 nC @ 4.5 V
 
- Input Capacitance (Ciss) (Max) @ Vds :
 - 3950 pF @ 20 V
 
- Mounting Type :
 - Surface Mount
 
- Operating Temperature :
 - -55°C ~ 175°C (TJ)
 
- Package / Case :
 - SOT-23-6 Thin, TSOT-23-6
 
- Part Status :
 - Active
 
- Power Dissipation (Max) :
 - 5W (Tc)
 
- Rds On (Max) @ Id, Vgs :
 - 21mOhm @ 5A, 4.5V
 
- Supplier Device Package :
 - 6-TSOP
 
- Technology :
 - MOSFET (Metal Oxide)
 
- Vgs (Max) :
 - ±12V
 
- Vgs(th) (Max) @ Id :
 - 1.4V @ 250µA
 
- Datasheets
 - SQ3495EV-T1_GE3
 
Manufacturer related products
Catalog related products
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| Part | Manufacturer | Stock | Description | 
|---|---|---|---|
| SQ3410EV-T1_GE3 | Vishay | 18 | MOSFET N-CH 30V 8A 6TSOP | 
| SQ3418AEEV-T1_BE3 | Vishay | 5,800 | MOSFET N-CH 40V 8A 6TSOP | 
| SQ3418AEEV-T1_GE3 | Vishay | 5,800 | MOSFET N-CHANNEL 30V 7.8A 6TSOP | 
| SQ3418EEV-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 40V 8A 6TSOP | 
| SQ3418EV-T1_GE3 | Vishay | 5,800 | MOSFET N-CHANNEL 40V 8A 6TSOP | 
| SQ3419AEEV-T1_GE3 | Vishay | 5,800 | MOSFET P-CHANNEL 40V 6.9A 6TSOP | 
| SQ3419EEV-T1-GE3 | Vishay | 5,800 | MOSFET P-CH 40V 7.4A 6TSOP | 
| SQ3419EV-T1_BE3 | Vishay | 5,800 | MOSFET P-CH 40V 6.9A 6TSOP | 
| SQ3419EV-T1_GE3 | Vishay | 2 | MOSFET P-CH 40V 6.9A 6TSOP | 
| SQ3425EV-T1_BE3 | Vishay | 5,800 | MOSFET P-CH 20V 7.4A SOT23-3 | 
| SQ3425EV-T1_GE3 | Vishay | 2 | MOSFET P-CHANNEL 20V 7.4A 6TSOP | 
| SQ3426AEEV-T1_BE3 | Vishay | 5,800 | MOSFET N-CH 60V 7A 6TSOP | 
| SQ3426AEEV-T1_GE3 | Vishay | 5,800 | MOSFET N-CH 60V 7A 6TSOP | 
| SQ3426EEV-T1-GE3 | Vishay | 5,800 | MOSFET N-CH 60V 7A 6TSOP | 
| SQ3426EV-T1_BE3 | Vishay | 5,800 | MOSFET N-CHANNEL 60V 7A 6TSOP | 



                        




