IPD90N10S4L06ATMA1

Mfr.Part #
IPD90N10S4L06ATMA1
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
Download
Description
MOSFET N-CH 100V 90A TO252-3
Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
90A (Tc)
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
6250 pF @ 25 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Part Status :
Active
Power Dissipation (Max) :
136W (Tc)
Rds On (Max) @ Id, Vgs :
6.6mOhm @ 90A, 10V
Supplier Device Package :
PG-TO252-3-313
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±16V
Vgs(th) (Max) @ Id :
2.1V @ 90µA
Datasheets
IPD90N10S4L06ATMA1

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