- Manufacturer :
 - onsemi
 
- Product Category :
 - Transistors - FETs, MOSFETs - Single
 
- Current - Continuous Drain (Id) @ 25°C :
 - 3.7A (Ta)
 
- Drain to Source Voltage (Vdss) :
 - 100 V
 
- Drive Voltage (Max Rds On, Min Rds On) :
 - 6V, 10V
 
- FET Feature :
 - -
 
- FET Type :
 - N-Channel
 
- Gate Charge (Qg) (Max) @ Vgs :
 - 20 nC @ 10 V
 
- Input Capacitance (Ciss) (Max) @ Vds :
 - 632 pF @ 50 V
 
- Mounting Type :
 - Surface Mount
 
- Operating Temperature :
 - -55°C ~ 150°C (TJ)
 
- Package / Case :
 - TO-261-4, TO-261AA
 
- Part Status :
 - Active
 
- Power Dissipation (Max) :
 - 3W (Ta)
 
- Rds On (Max) @ Id, Vgs :
 - 120mOhm @ 3.7A, 10V
 
- Supplier Device Package :
 - SOT-223-4
 
- Technology :
 - MOSFET (Metal Oxide)
 
- Vgs (Max) :
 - ±20V
 
- Vgs(th) (Max) @ Id :
 - 4V @ 250µA
 
- Datasheets
 - FDT3612
 
Manufacturer related products
Catalog related products
related products
| Part | Manufacturer | Stock | Description | 
|---|---|---|---|
| FDT3612 | Rochester Electronics | 5,800 | POWER FIELD-EFFECT TRANSISTOR, 3 | 
| FDT3612-SB82273 | Flip Electronics | 5,800 | MOSFET N-CH 100V 3.7A SOT223-4 | 
| FDT3612-SN00151 | onsemi | 5,800 | MOSFET N-CH 100V SOT223 | 
| FDT3N40TF | onsemi | 3,970 | MOSFET N-CH 400V 2A SOT223-4 | 



                                                                                                                    




