RV4E031RPHZGTCR1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3.1A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

4.8 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

460 pF @ 10 V

Mounting Type :

Surface Mount, Wettable Flank

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-PowerWFDFN

Part Status :

Active

Power Dissipation (Max) :

1.5W (Ta)

Rds On (Max) @ Id, Vgs :

105mOhm @ 3.1A, 10V

Supplier Device Package :

DFN1616-6W

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA