- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 3.2A (Ta)
- Drain to Source Voltage (Vdss) :
- 12 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 1.2V, 4.5V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 12 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 634 pF @ 6 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 3-XDFN Exposed Pad
- Part Status :
- Active
- Power Dissipation (Max) :
- 317mW (Ta), 8.33W (Tc)
- Rds On (Max) @ Id, Vgs :
- 72mOhm @ 3.2A, 4.5V
- Supplier Device Package :
- DFN1010D-3
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±8V
- Vgs(th) (Max) @ Id :
- 1V @ 250µA
- Datasheets
- PMXB65UPEZ
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