FDU6512A

Manufacturer :

Rochester Electronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

10.7A (Ta), 36A (Tc)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

19 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

1082 pF @ 10 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Part Status :

Obsolete

Power Dissipation (Max) :

3.8W (Ta), 43W (Tc)

Rds On (Max) @ Id, Vgs :

21mOhm @ 10.7A, 4.5V

Supplier Device Package :

I-PAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

1.5V @ 250µA