FQB9N50CFTM
- Mfr.Part #
- FQB9N50CFTM
- Manufacturer
- Rochester Electronics
- Package/Case
- -
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 9A D2PAK
- Manufacturer :
- Rochester Electronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 9A (Tc)
- Drain to Source Voltage (Vdss) :
- 500 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 35 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1030 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Part Status :
- Obsolete
- Power Dissipation (Max) :
- 173W (Tc)
- Rds On (Max) @ Id, Vgs :
- 850mOhm @ 4.5A, 10V
- Supplier Device Package :
- D2PAK (TO-263)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- FQB9N50CFTM
Manufacturer related products
Catalog related products
related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
FQB9N08LTM | onsemi | 5,800 | MOSFET N-CH 80V 9.3A D2PAK |
FQB9N08TM | Rochester Electronics | 7,169 | MOSFET N-CH 80V 9.3A D2PAK |
FQB9N08TM | onsemi | 5,800 | MOSFET N-CH 80V 9.3A D2PAK |
FQB9N15TM | onsemi | 5,800 | MOSFET N-CH 150V 9A D2PAK |
FQB9N25CTM | Rochester Electronics | 3,222 | MOSFET N-CH 250V 8.8A D2PAK |
FQB9N25CTM | onsemi | 5,800 | MOSFET N-CH 250V 8.8A D2PAK |
FQB9N25TM | Rochester Electronics | 5,800 | MOSFET N-CH 250V 9.4A D2PAK |
FQB9N25TM | onsemi | 5,800 | MOSFET N-CH 250V 9.4A D2PAK |
FQB9N50CFTM | onsemi | 5,800 | MOSFET N-CH 500V 9A D2PAK |
FQB9N50CFTM_WS | onsemi | 5,800 | MOSFET N-CH 500V 9A D2PAK |
FQB9N50CTM | onsemi | 2 | MOSFET N-CH 500V 9A D2PAK |
FQB9N50TM | Rochester Electronics | 485 | MOSFET N-CH 500V 9A D2PAK |
FQB9N50TM | onsemi | 5,800 | MOSFET N-CH 500V 9A D2PAK |
FQB9P25TM | onsemi | 5,800 | MOSFET P-CH 250V 9.4A D2PAK |