ES6U1T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

1.3A (Ta)

Drain to Source Voltage (Vdss) :

12 V

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 4.5V

FET Feature :

Schottky Diode (Isolated)

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

2.4 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

290 pF @ 6 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

6-SMD, Flat Leads

Part Status :

Last Time Buy

Power Dissipation (Max) :

700mW (Ta)

Rds On (Max) @ Id, Vgs :

260mOhm @ 1.3A, 4.5V

Supplier Device Package :

6-WEMT

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±10V

Vgs(th) (Max) @ Id :

1V @ 1mA