FDD850N10LD

Manufacturer :

Rochester Electronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

15.3A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

28.9 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1465 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-252-5, DPak (4 Leads + Tab), TO-252AD

Part Status :

Active

Power Dissipation (Max) :

42W (Tc)

Rds On (Max) @ Id, Vgs :

75mOhm @ 12A, 10V

Supplier Device Package :

TO-252-4

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA