- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 680mA (Ta)
- Drain to Source Voltage (Vdss) :
- 20 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 1.8V, 4.5V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 1.14 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 87 pF @ 10 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 3-XFDFN
- Part Status :
- Active
- Power Dissipation (Max) :
- 360mW (Ta), 2.7W (Tc)
- Rds On (Max) @ Id, Vgs :
- 850mOhm @ 400mA, 4.5V
- Supplier Device Package :
- DFN1006B-3
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±8V
- Vgs(th) (Max) @ Id :
- 1.3V @ 250µA
- Datasheets
- PMZB670UPE,315
Manufacturer related products
Catalog related products
related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
PMZB1200UPE315 | Rochester Electronics | 5,800 | NOW NEXPERIA PMZB1200UPE SMALL S |
PMZB1200UPEYL | Rochester Electronics | 644,195 | NEXPERIA PMZB1200U - 30V, P-CHAN |
PMZB1200UPEYL | Nexperia | 61,946 | MOSFET P-CH 30V 410MA DFN1006B-3 |
PMZB150UNE315 | Rochester Electronics | 5,800 | SMALL SIGNAL N-CHANNEL MOSFET |
PMZB150UNEYL | Nexperia | 8,850 | MOSFET N-CH 20V 1.5A DFN1006B-3 |
PMZB200UNE315 | Rochester Electronics | 266,850 | SMALL SIGNAL N-CHANNEL MOSFET |
PMZB200UNEYL | Nexperia | 5,800 | MOSFET N-CH 30V 1.4A DFN1006B-3 |
PMZB290UN,315 | Nexperia | 5,800 | MOSFET N-CH 20V 1A DFN1006B-3 |
PMZB290UN/FYL | NXP Semiconductors | 5,800 | PMZB290UN/FYL |
PMZB290UNE,315 | Rochester Electronics | 5,800 | MOSFET N-CH 20V 1A DFN1006B-3 |
PMZB290UNE,315 | Nexperia | 5,800 | MOSFET N-CH 20V 1A DFN1006B-3 |
PMZB290UNE2315 | Rochester Electronics | 5,800 | 1A, 20V, N CHANNEL, MOSFET, XQF |
PMZB290UNE2YL | Nexperia | 5,800 | MOSFET N-CH 20V 1.2A DFN1006B-3 |
PMZB300XN,315 | Rochester Electronics | 230,000 | MOSFET N-CH 20V 1A DFN1006B-3 |
PMZB300XN,315 | Nexperia | 5,800 | MOSFET N-CH 20V 1A DFN1006B-3 |