TPN11006PL,LQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

26A (Tc)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

17 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1625 pF @ 30 V

Mounting Type :

Surface Mount

Operating Temperature :

175°C

Package / Case :

8-PowerVDFN

Part Status :

Active

Power Dissipation (Max) :

610mW (Ta), 61W (Tc)

Rds On (Max) @ Id, Vgs :

11.4mOhm @ 13A, 10V

Supplier Device Package :

8-TSON Advance (3.1x3.1)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 200µA