FDM606P

Manufacturer :

Rochester Electronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

6.8A (Tc)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

30 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

2200 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SMD, Flat Lead Exposed Pad

Part Status :

Obsolete

Power Dissipation (Max) :

1.92W (Ta)

Rds On (Max) @ Id, Vgs :

30mOhm @ 6.8A, 4.5V

Supplier Device Package :

8-MLP, MicroFET (3x2)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1.5V @ 250µA