NTE4151PT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

760mA (Tj)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

2.1 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

156 pF @ 5 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SC-89, SOT-490

Part Status :

Active

Power Dissipation (Max) :

313mW (Tj)

Rds On (Max) @ Id, Vgs :

360mOhm @ 350mA, 4.5V

Supplier Device Package :

SC-89-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±6V

Vgs(th) (Max) @ Id :

1.2V @ 250µA