- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 6.6A
- Drain to Source Voltage (Vdss) :
- 40V
- FET Feature :
- Standard
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 625pF @ 20V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Part Status :
- Obsolete
- Power - Max :
- 3.1W
- Rds On (Max) @ Id, Vgs :
- 39mOhm @ 5A, 10V
- Supplier Device Package :
- 8-SOIC
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Datasheets
- SI4906DY-T1-GE3
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SI4904DY-T1-E3 | Vishay | 5,800 | MOSFET 2N-CH 40V 8A 8-SOIC |
SI4904DY-T1-GE3 | Vishay | 5,800 | MOSFET 2N-CH 40V 8A 8-SOIC |
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SI4908DY-T1-E3 | Vishay | 5,800 | MOSFET 2N-CH 40V 5A 8-SOIC |
SI4908DY-T1-GE3 | Vishay | 5,800 | MOSFET 2N-CH 40V 5A 8-SOIC |
SI4909DY-T1-GE3 | Vishay | 5,800 | MOSFET 2P-CH 40V 8A 8SO |
SI4910DY-T1-E3 | Vishay | 5,800 | MOSFET 2N-CH 40V 7.6A 8-SOIC |
SI4910DY-T1-GE3 | Vishay | 5,800 | MOSFET 2N-CH 40V 7.6A 8-SOIC |
SI4913DY-T1-E3 | Vishay | 5,800 | MOSFET 2P-CH 20V 7.1A 8-SOIC |
SI4913DY-T1-GE3 | Vishay | 5,800 | MOSFET 2P-CH 20V 7.1A 8-SOIC |
SI4914BDY-T1-E3 | Vishay | 5,800 | MOSFET 2N-CH 30V 8.4A 8-SOIC |
SI4914BDY-T1-GE3 | Vishay | 5,800 | MOSFET 2N-CH 30V 8.4A 8-SOIC |
SI4914DY-T1-E3 | Vishay | 5,800 | MOSFET 2N-CH 30V 5.5A 8-SOIC |