- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 6A
- Drain to Source Voltage (Vdss) :
- 20V
- FET Feature :
- Standard
- FET Type :
- N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 17.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 660pF @ 10V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- PowerPAK® ChipFET™ Dual
- Part Status :
- Obsolete
- Power - Max :
- 10.4W
- Rds On (Max) @ Id, Vgs :
- 36mOhm @ 6.1A, 4.5V
- Supplier Device Package :
- PowerPAK® ChipFet Dual
- Vgs(th) (Max) @ Id :
- 1.8V @ 250µA
- Datasheets
- SI5519DU-T1-GE3
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| SI5504BDC-T1-E3 | Vishay | 5,800 | MOSFET N/P-CH 30V 4A 1206-8 |
| SI5504BDC-T1-GE3 | Vishay | 5,800 | MOSFET N/P-CH 30V 4A 1206-8 |
| SI5504DC-T1-E3 | Vishay | 5,800 | MOSFET N/P-CH 30V 2.9A 1206-8 |
| SI5504DC-T1-GE3 | Vishay | 5,800 | MOSFET N/P-CH 30V 2.9A 1206-8 |
| SI5509DC-T1-E3 | Vishay | 5,800 | MOSFET N/P-CH 20V 6.1A 1206-8 |
| SI5509DC-T1-GE3 | Vishay | 5,800 | MOSFET N/P-CH 20V 6.1A 1206-8 |
| SI5511DC-T1-E3 | Vishay | 5,800 | MOSFET N/P-CH 30V 4A 1206-8 |
| SI5511DC-T1-GE3 | Vishay | 5,800 | MOSFET N/P-CH 30V 4A 1206-8 |
| SI5513CDC-T1-E3 | Vishay | 5,800 | MOSFET N/P-CH 20V 4A 1206-8 |
| SI5513CDC-T1-GE3 | Vishay | 5,800 | MOSFET N/P-CH 20V 4A 1206-8 |
| SI5513DC-T1-E3 | Vishay | 5,800 | MOSFET N/P-CH 20V 3.1A 1206-8 |
| SI5513DC-T1-GE3 | Vishay | 5,800 | MOSFET N/P-CH 20V 3.1A 1206-8 |
| SI5515CDC-T1-E3 | Vishay | 5,800 | MOSFET N/P-CH 20V 4A 1206-8 |
| SI5515CDC-T1-GE3 | Vishay | 5,800 | MOSFET N/P-CH 20V 4A 1206-8 |
| SI5515DC-T1-E3 | Vishay | 5,800 | MOSFET N/P-CH 20V 4.4A 1206-8 |
