- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 7.6A, 7.9A
- Drain to Source Voltage (Vdss) :
- 40V
- FET Feature :
- Standard
- FET Type :
- N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 855pF @ 20V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Part Status :
- Obsolete
- Power - Max :
- 3.1W, 3.2W
- Rds On (Max) @ Id, Vgs :
- 27mOhm @ 6A, 10V
- Supplier Device Package :
- 8-SOIC
- Vgs(th) (Max) @ Id :
- 2V @ 250µA
- Datasheets
- SI4569DY-T1-E3
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| SI4500BDY-T1-E3 | Vishay | 5,800 | MOSFET N/P-CH 20V 6.6A 8SOIC |
| SI4500BDY-T1-GE3 | Vishay | 5,800 | MOSFET N/P-CH 20V 6.6A 8-SOIC |
| SI4501ADY-T1-E3 | Vishay | 5,800 | MOSFET N/P-CH 30V/8V 8SOIC |
| SI4501ADY-T1-GE3 | Vishay | 5,800 | MOSFET N/P-CH 30V/8V 8-SOIC |
| SI4501BDY-T1-GE3 | Vishay | 5,800 | MOSFET N/P-CH 30V/8V 8SOIC |
| SI4511DY-T1-E3 | Vishay | 5,800 | MOSFET N/P-CH 20V 7.2A 8-SOIC |
| SI4511DY-T1-GE3 | Vishay | 5,800 | MOSFET N/P-CH 20V 7.2A 8-SOIC |
| SI4532ADY-T1-E3 | Vishay | 5,800 | MOSFET N/P-CH 30V 3.7A 8-SOIC |
| SI4532ADY-T1-GE3 | Vishay | 5,800 | MOSFET N/P-CH 30V 3.7A 8-SOIC |
| SI4532CDY-T1-GE3 | Vishay | 5,800 | MOSFET N/P-CH 30V 6A 8-SOIC |
| SI4532DY | Rochester Electronics | 5,800 | POWER FIELD-EFFECT TRANSISTOR, 3 |
| SI4532DY | onsemi | 14 | MOSFET N/P-CH 30V 3.9/3.5A 8SOIC |
| SI4539ADY-T1-E3 | Vishay | 5,800 | MOSFET N/P-CH 30V 4.4A 8-SOIC |
| SI4539ADY-T1-GE3 | Vishay | 5,800 | MOSFET N/P-CH 30V 4.4A 8-SOIC |
| SI4542DY | onsemi | 5,800 | MOSFET N/P-CH 30V 6A 8SOIC |
