- Manufacturer :
 - onsemi
 
- Product Category :
 - Transistors - FETs, MOSFETs - Arrays
 
- Current - Continuous Drain (Id) @ 25°C :
 - 3.4A, 2.6A
 
- Drain to Source Voltage (Vdss) :
 - 100V, 80V
 
- FET Feature :
 - Logic Level Gate
 
- FET Type :
 - 2 N and 2 P-Channel (H-Bridge)
 
- Gate Charge (Qg) (Max) @ Vgs :
 - 5nC @ 10V
 
- Input Capacitance (Ciss) (Max) @ Vds :
 - 210pF @ 50V
 
- Mounting Type :
 - Surface Mount
 
- Operating Temperature :
 - -55°C ~ 150°C (TJ)
 
- Package / Case :
 - 12-WDFN Exposed Pad
 
- Part Status :
 - Active
 
- Power - Max :
 - 2.5W
 
- Rds On (Max) @ Id, Vgs :
 - 110mOhm @ 3A, 10V
 
- Supplier Device Package :
 - 12-MLP (5x4.5)
 
- Vgs(th) (Max) @ Id :
 - 4V @ 250µA
 
- Datasheets
 - FDMQ8203
 
Manufacturer related products
Catalog related products
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| Part | Manufacturer | Stock | Description | 
|---|---|---|---|
| FDMQ8205 | onsemi | 5,800 | IC OR CTRLR BRIDGE RECT 12MLP | 
| FDMQ8205A | onsemi | 5,800 | GREENBRIDGETM 2 SERIES OF HIGH-E | 
| FDMQ8403 | onsemi | 5,800 | MOSFET 4N-CH 100V 3.1A 12MLP | 
| FDMQ8403 | Rochester Electronics | 5,800 | POWER FIELD-EFFECT TRANSISTOR, 3 | 
| FDMQ86530L | onsemi | 5,800 | MOSFET 4N-CH 60V 8A 12MLP | 



                                                                                                                    




