- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 6A
- Drain to Source Voltage (Vdss) :
- 30V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 P-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 14.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 430pF @ 15V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- PowerPAK® ChipFET™ Dual
- Part Status :
- Obsolete
- Power - Max :
- 10.4W
- Rds On (Max) @ Id, Vgs :
- 54mOhm @ 3A, 10V
- Supplier Device Package :
- PowerPAK® ChipFet Dual
- Vgs(th) (Max) @ Id :
- 2.4V @ 250µA
- Datasheets
- SI5997DU-T1-GE3
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| SI5902BDC-T1-E3 | Vishay | 5 | MOSFET 2N-CH 30V 4A 1206-8 |
| SI5902BDC-T1-GE3 | Vishay | 4,499 | MOSFET 2N-CH 30V 4A 1206-8 |
| SI5902DC-T1-E3 | Vishay | 5,800 | MOSFET 2N-CH 30V 2.9A 1206-8 |
| SI5903DC-T1-E3 | Vishay | 5,800 | MOSFET 2P-CH 20V 2.1A 1206-8 |
| SI5903DC-T1-GE3 | Vishay | 5,800 | MOSFET 2P-CH 20V 2.1A 1206-8 |
| SI5904DC-T1-E3 | Vishay | 5,800 | MOSFET 2N-CH 20V 3.1A 1206-8 |
| SI5904DC-T1-GE3 | Vishay | 5,800 | MOSFET 2N-CH 20V 3.1A 1206-8 |
| SI5905BDC-T1-E3 | Vishay | 5,800 | MOSFET 2P-CH 8V 4A 1206-8 |
| SI5905BDC-T1-GE3 | Vishay | 5,800 | MOSFET 2P-CH 8V 4A 1206-8 |
| SI5905DC-T1-E3 | Vishay | 5,800 | MOSFET 2P-CH 8V 3A 1206-8 |
| SI5905DC-T1-GE3 | Vishay | 5,800 | MOSFET 2P-CH 8V 3A 1206-8 |
| SI5906DU-T1-GE3 | Vishay | 5,800 | MOSFET 2N-CH 30V 6A PPAK FET |
| SI5908DC-T1-E3 | Vishay | 5,800 | MOSFET 2N-CH 20V 4.4A 1206-8 |
| SI5908DC-T1-GE3 | Vishay | 5,800 | MOSFET 2N-CH 20V 4.4A 1206-8 |
| SI5913DC-T1-E3 | Vishay | 5,800 | MOSFET P-CH 20V 4A 1206-8 |
