- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 15A (Ta), 18A (Tc)
- Drain to Source Voltage (Vdss) :
- 40V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 896pF @ 20V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- PowerPAK® SO-8 Dual
- Part Status :
- Active
- Power - Max :
- 48W, 43W
- Rds On (Max) @ Id, Vgs :
- 16mOhm @ 15A, 10V
- Supplier Device Package :
- PowerPAK® SO-8 Dual Asymmetric
- Vgs(th) (Max) @ Id :
- 2.5V @ 250µA
- Datasheets
- SQJ940EP-T1_GE3
Manufacturer related products
Catalog related products
related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| SQJ910AEP-T1_GE3 | Vishay | 5,800 | MOSFET 2 N-CH 30V POWERPAK SO8 |
| SQJ910AEP-T2_GE3 | Vishay | 5,800 | DUAL N-CHANNEL 30-V (D-S) 175C M |
| SQJ912AEP-T1_GE3 | Vishay | 5,800 | MOSFET 2N-CH 40V 30A PPAK SO-8 |
| SQJ912AEP-T2_BE3 | Vishay | 5,800 | MOSFET 2N-CH 40V 30A PPAK SO-8 |
| SQJ912AEP-T2_GE3 | Vishay | 5,800 | DUAL N-CHANNEL 40-V (D-S) 175C M |
| SQJ912BEP-T1_GE3 | Vishay | 5,800 | MOSFET N-CH DUAL 40V PPSO-8L |
| SQJ912DEP-T1_GE3 | Vishay | 5,800 | AUTOMOTIVE DUAL N-CHANNEL 40 V ( |
| SQJ914EP-T1_GE3 | Vishay | 1,253 | MOSFET 2 N-CH 30V POWERPAK SO8 |
| SQJ941EP-T1-GE3 | Vishay | 5,800 | MOSFET 2P-CH 30V 8A PPAK SO-8 |
| SQJ942EP-T1_GE3 | Vishay | 1,900 | MOSFET 2 N-CH 40V POWERPAK SO8 |
| SQJ946EP-T1_GE3 | Vishay | 5,800 | MOSFET 2 N-CH 40V POWERPAK SO8 |
| SQJ951EP-T1_BE3 | Vishay | 5,800 | MOSFET 2P-CH 30V 30A PPAK |
| SQJ951EP-T1_GE3 | Vishay | 5,800 | MOSFET 2P-CH 30V 30A PPAK |
| SQJ952EP-T1_GE3 | Vishay | 5,800 | MOSFET 2 N-CH 60V POWERPAK SO8 |
| SQJ956EP-T1_GE3 | Vishay | 5,800 | MOSFET 2 N-CH 60V POWERPAK SO8 |
