- Manufacturer :
 - onsemi
 
- Product Category :
 - Transistors - FETs, MOSFETs - Arrays
 
- Current - Continuous Drain (Id) @ 25°C :
 - 6.9A, 8.2A
 
- Drain to Source Voltage (Vdss) :
 - 30V
 
- FET Feature :
 - Logic Level Gate
 
- FET Type :
 - 2 N-Channel (Dual)
 
- Gate Charge (Qg) (Max) @ Vgs :
 - 12nC @ 5V
 
- Input Capacitance (Ciss) (Max) @ Vds :
 - 800pF @ 15V
 
- Mounting Type :
 - Surface Mount
 
- Operating Temperature :
 - -55°C ~ 150°C (TJ)
 
- Part Status :
 - Obsolete
 
- Power - Max :
 - 900mW
 
- Rds On (Max) @ Id, Vgs :
 - 21mOhm @ 6.9A, 10V
 
- Supplier Device Package :
 - 8-SOIC
 
- Vgs(th) (Max) @ Id :
 - 3V @ 250µA
 
- Datasheets
 - FDS6994S
 
Manufacturer related products
Catalog related products
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| Part | Manufacturer | Stock | Description | 
|---|---|---|---|
| FDS6064N3 | Rochester Electronics | 30,815 | MOSFET N-CH 20V 23A 8SO | 
| FDS6064N3 | onsemi | 5,800 | MOSFET N-CH 20V 23A 8SO | 
| FDS6064N7 | Rochester Electronics | 5,800 | MOSFET N-CH 20V 23A 8SO | 
| FDS6064N7 | onsemi | 5,800 | MOSFET N-CH 20V 23A 8SO | 
| FDS6162N3 | Rochester Electronics | 33,137 | MOSFET N-CH 20V 21A 8SO | 
| FDS6162N3 | onsemi | 5,800 | MOSFET N-CH 20V 21A 8SO | 
| FDS6162N7 | Rochester Electronics | 15,521 | MOSFET N-CH 20V 23A 8SO | 
| FDS6162N7 | onsemi | 5,800 | MOSFET N-CH 20V 23A 8SO | 
| FDS6294 | Rochester Electronics | 30,057 | POWER FIELD-EFFECT TRANSISTOR, 1 | 
| FDS6294 | onsemi | 5,800 | MOSFET N-CH 30V 13A 8SOIC | 
| FDS6298 | onsemi | 5,800 | MOSFET N-CH 30V 13A 8SOIC | 
| FDS6298_G | onsemi | 5,800 | MOSFET N-CHANNEL 30V 13A 8SO | 
| FDS6299S | Rochester Electronics | 25,522 | MOSFET N-CH 30V 21A 8SOIC | 
| FDS6299S | onsemi | 5,800 | MOSFET N-CH 30V 21A 8SOIC | 
| FDS6375 | onsemi | 1,182 | MOSFET P-CH 20V 8A 8SOIC | 



                                                                                                                    




