QS8M12TCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

4A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

3.4nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-SMD, Flat Lead

Part Status :

Active

Power - Max :

1.5W

Rds On (Max) @ Id, Vgs :

42mOhm @ 4A, 10V

Supplier Device Package :

TSMT8

Vgs(th) (Max) @ Id :

2.5V @ 1mA