- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 4A
- Drain to Source Voltage (Vdss) :
- 20V
- FET Feature :
- Standard
- FET Type :
- 2 P-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 455pF @ 10V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-SMD, Flat Lead
- Part Status :
- Active
- Power - Max :
- 3.1W
- Rds On (Max) @ Id, Vgs :
- 100mOhm @ 3.1A, 4.5V
- Supplier Device Package :
- 1206-8 ChipFET™
- Vgs(th) (Max) @ Id :
- 1V @ 250µA
- Datasheets
- SI5935CDC-T1-GE3
Manufacturer related products
Catalog related products
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| SI5902BDC-T1-E3 | Vishay | 5 | MOSFET 2N-CH 30V 4A 1206-8 |
| SI5902BDC-T1-GE3 | Vishay | 4,499 | MOSFET 2N-CH 30V 4A 1206-8 |
| SI5902DC-T1-E3 | Vishay | 5,800 | MOSFET 2N-CH 30V 2.9A 1206-8 |
| SI5903DC-T1-E3 | Vishay | 5,800 | MOSFET 2P-CH 20V 2.1A 1206-8 |
| SI5903DC-T1-GE3 | Vishay | 5,800 | MOSFET 2P-CH 20V 2.1A 1206-8 |
| SI5904DC-T1-E3 | Vishay | 5,800 | MOSFET 2N-CH 20V 3.1A 1206-8 |
| SI5904DC-T1-GE3 | Vishay | 5,800 | MOSFET 2N-CH 20V 3.1A 1206-8 |
| SI5905BDC-T1-E3 | Vishay | 5,800 | MOSFET 2P-CH 8V 4A 1206-8 |
| SI5905BDC-T1-GE3 | Vishay | 5,800 | MOSFET 2P-CH 8V 4A 1206-8 |
| SI5905DC-T1-E3 | Vishay | 5,800 | MOSFET 2P-CH 8V 3A 1206-8 |
| SI5905DC-T1-GE3 | Vishay | 5,800 | MOSFET 2P-CH 8V 3A 1206-8 |
| SI5906DU-T1-GE3 | Vishay | 5,800 | MOSFET 2N-CH 30V 6A PPAK FET |
| SI5908DC-T1-E3 | Vishay | 5,800 | MOSFET 2N-CH 20V 4.4A 1206-8 |
| SI5908DC-T1-GE3 | Vishay | 5,800 | MOSFET 2N-CH 20V 4.4A 1206-8 |
| SI5913DC-T1-E3 | Vishay | 5,800 | MOSFET P-CH 20V 4A 1206-8 |
