- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 4.1A, 3A
- Drain to Source Voltage (Vdss) :
- 30V
- FET Feature :
- Logic Level Gate
- FET Type :
- N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 630pF @ 24V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Part Status :
- Obsolete
- Power - Max :
- 2W
- Rds On (Max) @ Id, Vgs :
- 70mOhm @ 3A, 10V
- Supplier Device Package :
- 8-SOIC
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Datasheets
- MMDF2C03HDR2G
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|---|---|---|---|
| MMDF1300R2 | Rochester Electronics | 73,490 | P-CHANNEL POWER MOSFET |
| MMDF1N05ER2 | onsemi | 5,800 | MOSFET 2N-CH 50V 2A 8-SOIC |
| MMDF1N05ER2G | onsemi | 5,800 | MOSFET 2N-CH 50V 2A 8SOIC |
| MMDF2C03HDR2 | onsemi | 5,800 | MOSFET N/P-CH 30V 4.1A/3A 8SOIC |
| MMDF2N02ER2 | onsemi | 5,800 | MOSFET 2N-CH 25V 3.6A 8-SOIC |
| MMDF2N02ER2G | onsemi | 5,800 | MOSFET 2N-CH 25V 3.6A 8-SOIC |
| MMDF2N05ZR2 | Rochester Electronics | 87,765 | SMALL SIGNAL N-CHANNEL MOSFET |
| MMDF2P01HDR2 | Rochester Electronics | 17,085 | P-CHANNEL POWER MOSFET |
| MMDF2P02ER2 | Rochester Electronics | 4,104 | MOSFET PWR P-CH 25V 2.5A 8-SOIC |
| MMDF2P02ER2G | onsemi | 5,214 | MOSFET 2P-CH 25V 2.5A 8SOIC |
| MMDF2P02HDR2 | onsemi | 5,800 | MOSFET 2P-CH 20V 3.3A 8-SOIC |
| MMDF2P02HDR2G | onsemi | 1,245 | MOSFET 2P-CH 20V 3.3A 8-SOIC |
| MMDF3N02HDR2 | onsemi | 18,532 | MOSFET N-CH 20V 3.8A 8SOIC |
| MMDF3N02HDR2G | onsemi | 5,800 | MOSFET N-CH 20V 3.8A 8SOIC |
| MMDF3N03HDR2 | Rochester Electronics | 5,800 | MOSFET 2N-CH 30V 4.1A 8-SOIC |
