FDS6812A

Mfr.Part #
FDS6812A
Manufacturer
Rochester Electronics
Package/Case
-
Datasheet
Download
Description
N-CHANNEL POWER MOSFET
Manufacturer :
Rochester Electronics
Product Category :
Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
6.7A
Drain to Source Voltage (Vdss) :
20V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
19nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
1082pF @ 10V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Part Status :
Obsolete
Power - Max :
900mW
Rds On (Max) @ Id, Vgs :
22mOhm @ 6.7A, 4.5V
Supplier Device Package :
8-SOIC
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Datasheets
FDS6812A

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