- Manufacturer :
- EPC
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 23A
- Drain to Source Voltage (Vdss) :
- 80V
- FET Feature :
- GaNFET (Gallium Nitride)
- FET Type :
- 2 N-Channel (Half Bridge)
- Gate Charge (Qg) (Max) @ Vgs :
- 6.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 7600pF @ 40V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -
- Package / Case :
- Die
- Part Status :
- Discontinued at Digi-Key
- Power - Max :
- -
- Rds On (Max) @ Id, Vgs :
- 5.5mOhm @ 20A, 5V
- Supplier Device Package :
- Die
- Vgs(th) (Max) @ Id :
- 2.5V @ 7mA
- Datasheets
- EPC2103ENGRT
Manufacturer related products
Catalog related products
related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| EPC200-CSP5 | ESPROS Photonics AG | 1,281 | SENSOR PHOTODIODE 850NM |
| EPC2001 | EPC | 5,800 | GANFET N-CH 100V 25A DIE OUTLINE |
| EPC2001C | EPC | 79,228 | GANFET N-CH 100V 36A DIE OUTLINE |
| EPC2007 | EPC | 5,800 | GANFET N-CH 100V 6A DIE OUTLINE |
| EPC2007C | EPC | 30,983 | GANFET N-CH 100V 6A DIE OUTLINE |
| EPC2010 | EPC | 5,800 | GANFET N-CH 200V 12A DIE |
| EPC2010C | EPC | 17,363 | GANFET N-CH 200V 22A DIE OUTLINE |
| EPC2012 | EPC | 5,800 | GANFET N-CH 200V 3A DIE |
| EPC2012C | EPC | 6,614 | GANFET N-CH 200V 5A DIE OUTLINE |
| EPC2014 | EPC | 5,800 | GANFET N-CH 40V 10A DIE OUTLINE |
| EPC2014C | EPC | 132,488 | GANFET N-CH 40V 10A DIE OUTLINE |
| EPC2015 | EPC | 5,800 | GANFET N-CH 40V 33A DIE OUTLINE |
| EPC2015C | EPC | 16,843 | GANFET N-CH 40V 53A DIE |
| EPC2016 | EPC | 5,800 | GANFET N-CH 100V 11A DIE |
| EPC2016C | EPC | 168,744 | GANFET N-CH 100V 18A DIE |
