UNR412200A

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

500 mA

Current - Collector Cutoff (Max) :

1µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 100mA, 10V

Frequency - Transition :

200 MHz

Mounting Type :

Through Hole

Package / Case :

3-SSIP

Part Status :

Obsolete

Power - Max :

300 mW

Resistor - Base (R1) :

4.7 kOhms

Resistor - Emitter Base (R2) :

4.7 kOhms

Supplier Device Package :

NS-A1

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 100mA

Voltage - Collector Emitter Breakdown (Max) :

50 V