RN2421(TE85L,F)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

800 mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 100mA, 1V

Frequency - Transition :

200 MHz

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Part Status :

Not For New Designs

Power - Max :

200 mW

Resistor - Base (R1) :

1 kOhms

Resistor - Emitter Base (R2) :

1 kOhms

Supplier Device Package :

S-Mini

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

250mV @ 2mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

50 V