RN1110MFV,L3F

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA, 5V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Package / Case :

SOT-723

Part Status :

Active

Power - Max :

150 mW

Resistor - Base (R1) :

4.7 kOhms

Resistor - Emitter Base (R2) :

-

Supplier Device Package :

VESM

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500µA, 5mA

Voltage - Collector Emitter Breakdown (Max) :

50 V