- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector (Ic) (Max) :
- 100 mA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 40mA, 5V
- Frequency - Transition :
- 180 MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- 3-XFDFN
- Part Status :
- Active
- Power - Max :
- 250 mW
- Resistor - Base (R1) :
- 1 kOhms
- Resistor - Emitter Base (R2) :
- 1 kOhms
- Supplier Device Package :
- DFN1006B-3
- Transistor Type :
- PNP - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 1.5mA, 30mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Datasheets
- PDTA113EMB,315
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|---|---|---|---|
| PDTA113EE,115 | NXP Semiconductors | 5,800 | TRANS PREBIAS PNP 150MW SC75 |
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| PDTA113ZM,315 | Nexperia | 5,800 | TRANS PREBIAS PNP 250MW SOT883 |
