PBSS4350S,126

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

3 A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A, 2V

Frequency - Transition :

100MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Part Status :

Obsolete

Power - Max :

830 mW

Supplier Device Package :

TO-92-3

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

290mV @ 200mA, 2A

Voltage - Collector Emitter Breakdown (Max) :

50 V